HN58S256AT-20 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58S256AT-20

256 k EEPROM (32-kword × 8-bit)

Hitachi -> Renesas Electronics 

HN58S256A Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Power supply voltage relative to VSS

Input voltage relative to VSS

Operationg temperature range*2

VCC

Vin

Topr

–0.6 to +4.6

–0.5*1 to +4.6*3

0 to +70

Storage temperature range

Tstg

–55 to +125

Notes: 1. Vin min = –3.0 V for pulse width ≤ 50 ns

2. Including electrical characteristics and data retention

3. Should not exceed VCC + 1.0 V.

Unit

V

V

°C

°C

Recommended DC Operating Conditions

Parameter

Symbol

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

Topr

Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns.

2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.

Min

Typ

2.2

3.0

0

0

–0.3*1

—

Vcc × 0.7 —

0

—

Max

Unit

3.6

V

0

V

0.4

V

VCC + 0.3*2 V

70

°C

DC Characteristics (Ta = 0 to +70 °C, VCC = 2.2 to 3.6 V)

Parameter

Symbol Min

Typ

Input leakage current ILI

—

—

Output leakage current ILO

—

—

Standby VCC current

I CC1

—

—

I CC2

—

—

Operating VCC current ICC3

—

—

—

—

Output low voltage

VOL

—

—

Output high voltage

VOH

VCC × 0.8 —

Max

2

2

10

500

8

12

0.4

—

Unit

µA

µA

µA

µA

mA

mA

V

V

Test conditions

VCC = 3.6 V, Vin = 0 to 3.6 V

VCC = 3.6 V, Vout = 3.6/0.4 V,

CE = VIH, Vin = 0 to 3.6 V

CE = VCC

CE = VIH

Iout = 0 mA, Duty = 100%,

Cycle = 1 µs at VCC = 3.6 V

Iout = 0 mA, Duty = 100%,

Cycle = 150 ns at VCC = 3.6 V

IOL = 1.0 mA

IOH = –100 µA

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