5962-9461201HMX Просмотр технического описания (PDF) - Aeroflex Corporation

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5962-9461201HMX

High Speed 16 Megabit FLASH Multichip Module

Aeroflex Corporation 

General Description, Cont’d,

sealed co-fired ceramic 66 pin, 1.08"SQ PGA

or a 68 lead, .88"SQ Ceramic Gull Wing CQFP

package for operation over the temperature

range of -55°C to +125°C and military

environment.

Each flash memory die is organized as

512KX8 bits and is designed to be

programmed in-system with the standard

system 5.0V Vcc supply. A 12.0V VPP is not

required for write or erase operations. The

MCM can also be reprogrammed with standard

EPROM programmers (with the proper socket).

executing the erase command sequence. This

will invoke the Embedded Erase Algorithm

which is an internal algorithm that

automatically preprograms the array, (if it is not

already programmed) before executing the

erase operation. During erase, the device

automatically times the erase pulse widths and

verifies proper cell margin.

Each die in the module or any individual

sector of the die is typically erased and verified

in 1.5 seconds (if already completely

preprogrammed).

The standard ACT–F512K32 offers access

Each die also features a sector erase

times between 60ns and 150ns, allowing architecture. The sector mode allows for 64K

A

operation of high-speed microprocessors byte blocks of memory to be erased and

without wait states. To eliminate bus reprogrammed without affecting other blocks.

contention, the device has separate chip The ACT-F512K32 is erased when shipped

enable (CE) and write enable (WE). The from the factory.

ACT-F512K32 is command set compatible with

JEDEC standard 4 Mbit EEPROMs.

Commands are written to the command

register using standard microprocessor write

timings. Register contents serve as input to an

internal state-machine which controls the

erase and programming circuitry. Write cycles

also internally latch addresses and data

needed for the programming and erase

operations.

The device features single 5.0V power

supply operation for both read and write

functions. lnternally generated and regulated

voltages are provided for the program and

erase operations. A low VCC detector

automatically inhibits write operations on the

loss of power. The end of program or erase is

detected by Data Polling of D7 or by the Toggle

Bit feature on D6. Once the end of a program

or erase cycle has been completed, the device

Reading data out of the device is similar to internally resets to the read mode.

reading from 12.0V Flash or EPROM devices.

The ACT-F512K32 is programmed by

executing the program command sequence.

This will invoke the Embedded Program

Algorithm which is an internal algorithm that

automatically times the program pulse widths

and verifies proper cell margin. Typically, each

sector can be programmed and verified in less

All bits of each die, or all bits within a

sector of a die, are erased via

Fowler-Nordhiem tunneling. Bytes are

programmed one byte at a time by hot electron

injection.

DESC Standard Military Drawing (SMD)

numbers are released.

than one second. Erase is accomplished by

Aeroflex Circuit Technology

2

SCD1665 REV B 6/29/01 Plainview NY (516) 694-6700

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