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ACT-F128K32

High Speed 4 Megabit FLASH Multichip Module

Aeroflex Corporation 

General Description, Cont’d,

sealed co-fired ceramic 66 pin, 1.08" sq

PGA or a 68 lead, .88" sq Ceramic Gull

Wing CQFP package for operation over the

temperature range of -55°C to +125°C and

military environment.

Each flash memory die is organized as

128KX8 bits and is designed to be

programmed in-system with the standard

system 5.0V Vcc supply. A 12.0V VPP is

not required for write or erase operations.

The MCM can also be reprogrammed with

standard EPROM programmers (with the

proper socket).

The standard ACT-F128K32 offers

access times between 60ns and 150ns,

allowing operation of high-speed

microprocessors without wait states. To

eliminate bus contention, the device has

separate chip enable (CE) and write enable

(WE). The ACT-F128K32 is command set

compatible with JEDEC standard 1 Mbit

EEPROMs. Commands are written to the

command register using standard

microprocessor write timings. Register

contents serve as input to an internal

state-machine which controls the erase and

programming circuitry. Write cycles also

internally latch addresses and data needed

for the programming and erase operations.

Reading data out of the device is similar

to reading from 12.0V Flash or EPROM

devices. The ACT-F128K32 is programmed

by executing the program command

sequence. This will invoke the Embedded

Program Algorithm which is an internal

algorithm that automatically times the

program pulse widths and verifies proper

cell margin. Typically, each sector can be

programmed and verified in less than 0.3

second. Erase is accomplished by

executing the erase command sequence.

This will invoke the Embedded Erase

Algorithm which is an internal algorithm

that automatically preprograms the array, (if

it is not already programmed before)

executing the erase operation. During

erase, the device automatically times the

erase pulse widths and verifies proper cell

margin.

Each die in the module or any individual

sector of the die is typically erased and

verified in 1.3 seconds (if already

completely preprogrammed).

Each die also features a sector erase

architecture. The sector mode allows for

16K byte blocks of memory to be erased

and reprogrammed without affecting other

blocks. The ACT-F128K32 is erased when

shipped from the factory.

The device features single 5.0V power

supply operation for both read and write

functions. lnternally generated and

regulated voltages are provided for the

program and erase operations. A low VCC

detector automatically inhibits write

operations on the loss of power. The end of

program or erase is detected by Data

Polling of D7 or by the Toggle Bit feature on

D6. Once the end of a program or erase

cycle has been completed,-+ the device

internally resets to the read mode.

All bits of each die, or all bits within a

sector of a die, are erased via

Fowler-Nordhiem tunneling. Bytes are

programmed one byte at a time by hot

electron injection.

DESC Standard Military Drawing (SMD)

numbers are released.

Aeroflex Circuit Technology

2

SCD1667 REV A 4/28/97 Plainview NY (516) 694-6700

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