74HC3G34(2018) Просмотр технического описания (PDF) - NXP Semiconductors.
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74HC3G34 Datasheet PDF : 13 Pages
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Nexperia
74HC3G34; 74HCT3G34
Triple buffer gate
Symbol Parameter
Conditions
ICC
supply current
CI
input capacitance
74HCT3G34
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
II
ICC
ΔICC
CI
input leakage current
supply current
additional supply
current
input capacitance
per input pin; VI = VCC or GND;
IO = 0 A; VCC = 6.0 V
VCC = 4.5 V to 5.5 V
VCC = 4.5 V to 5.5 V
VI = VIH or VIL
IO = -20 μA; VCC = 4.5 V
IO = -4.0 mA; VCC = 4.5 V
VI = VIH or VIL
IO = 20 μA; VCC = 4.5 V
IO = 4.0 mA; VCC = 4.5 V
VI = VCC or GND; VCC = 5.5 V
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
per input; VCC = 4.5 V to 5.5 V;
VI = VCC - 2.1 V; IO = 0 A
-40 °C to +85 °C
Min Typ[1] Max
-
-
10
-
1.5
-
2.0 1.6
-
-
1.2 0.8
4.4 4.5
-
4.13 4.32 -
-
0
0.1
- 0.15 0.33
-
- ±1.0
-
-
10
-
- 375
-
1.5
-
[1] All typical values are measured at Tamb = 25 °C.
-40 °C to +125 °C Unit
Min
Max
-
20
μA
-
-
pF
2.0
-
V
-
0.8 V
4.4
-
V
3.7
-
V
-
0.1 V
-
0.4 V
-
±1.0 μA
-
20
μA
-
410 μA
-
-
pF
11 Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5.
Symbol Parameter
Conditions
-40 °C to +85 °C
Min Typ[1] Max
74HC3G34
tpd
propagation delay nA to nY; see Figure 4
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tt
transition time nY; see Figure 4
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation VI = GND to VCC
capacitance
[2]
-
-
-
[3]
-
-
-
[4]
-
29
95
9
19
8
16
18
95
6
19
5
16
10
-
-40 °C to +125 °C Unit
Min
Max
-
125 ns
-
25 ns
-
20 ns
-
125 ns
-
25 ns
-
20 ns
-
-
pF
74HC_HCT3G34
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 11 June 2018
© Nexperia B.V. 2018. All rights reserved.
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