74HC1G00 Просмотр технического описания (PDF) - Philips Electronics

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74HC1G00

2-input NAND gate

Philips Electronics 

Philips Semiconductors

2-input NAND gate

Product specification

74HC1G00; 74HCT1G00

DC CHARACTERISTICS

Family 74HC1G

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS

Tamb (°C)

SYMBOL

PARAMETER

OTHER

−40 to +85

VCC (V) MIN. TYP.(1) MAX.

−40 to +125

MIN. MAX.

VIH

HIGH-level input voltage

2.0

1.5 1.2

−

4.5

3.15 2.4

−

6.0

4.2 3.2

−

1.5

−

3.15 −

4.2

−

VIL

LOW-level input voltage

2.0

−

0.8

0.5

−

0.5

4.5

−

2.1

1.35 −

1.35

6.0

−

2.8

1.8

−

1.8

VOH

HIGH-level output

voltage

VI = VIH or VIL; 2.0

1.9 2.0

−

IO = −20 µA

1.9

−

VI = VIH or VIL; 4.5

4.4 4.5

−

IO = −20 µA

4.4

−

VI = VIH or VIL; 6.0

5.9 6.0

−

IO = −20 µA

5.9

−

VI = VIH or VIL; 4.5

IO = −2.0 mA

4.13 4.32 −

3.7

−

VI = VIH or VIL; 6.0

IO = −2.6 mA

5.63 5.81 −

5.2

−

VOL

LOW-level output

voltage

VI = VIH or VIL; 2.0

−

0

IO = 20 µA

0.1

−

0.1

VI = VIH or VIL; 4.5

−

0

0.1

−

0.1

IO = 20 µA

VI = VIH or VIL; 6.0

−

0

0.1

−

0.1

IO = 20 µA

VI = VIH or VIL; 4.5

−

0.15 0.33 −

0.4

IO = 2.0 mA

VI = VIH or VIL; 6.0

−

0.16 0.33 −

0.4

IO = 2.6 mA

ILI

input leakage current VI = VCC or GND 6.0

−

−

1.0

−

1.0

ICC

quiescent supply

current

VI = VCC or GND; 6.0

−

−

10

−

20

IO = 0

UNIT

V

V

V

V

V

V

V

V

V

V

V

V

V

V

V

V

µA

µA

Note

1. All typical values are measured at Tamb = 25 °C.

2002 May 15

5

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