74HC1G00 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

74HC1G00

2-input NAND gate

Philips Electronics 

Philips Semiconductors

2-input NAND gate

Product specification

74HC1G00; 74HCT1G00

FEATURES

• Wide supply voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability: standard.

DESCRIPTION

The 74HC1G/HCT1G00 is a high speed Si-gate CMOS

device.

The 74HC1G/HCT1G00 provides the 2-input NAND

function. The standard output currents are 1⁄2 compared to

the 74HC/HCT00.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

SYMBOL

PARAMETER

CONDITIONS

tPHL/tPLH

CI

CPD

propagation delay A, B to Y

input capacitance

power dissipation capacitance

CL = 15 pF; VCC = 5 V

notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

∑ (CL × VCC2 × fo) = sum of outputs.

2. For HC1G the condition is VI = GND to VCC.

For HCT1G the condition is VI = GND to VCC − 1.5 V.

TYPICAL

HC1G

7

1.5

19

HCT1G

10

1.5

21

UNIT

ns

pF

pF

FUNCTION TABLE

See note 1.

INPUTS

A

B

L

L

L

H

H

L

H

H

Note

1. H = HIGH voltage level;

L = LOW voltage level.

OUTPUT

Y

H

H

H

L

2002 May 15

2

Share Link: