2SK3402 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

Список матч

2SK3402

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5±0.2

5.0±0.2

4

123

1.1±0.2

2.3±0.2

0.5±0.1

2.3 2.3

0.5-+00..12

0.5-+00..12

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2SK3402

2) TO-252 (MP-3Z)

6.5±0.2

5.0±0.2

4

2.3±0.2

0.5±0.1

123

1.1±0.2

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Data Sheet D14473EJ3V1DS

7

Share Link: