2SK3402 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3402 Datasheet PDF : 8 Pages
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2SK3402
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
RDS(on)2 VGS = 4.0 V, ID = 18 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 18 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 36 A
IF = 36 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 36 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
Note Pulsed
MIN. TYP. MAX. UNIT
10 µA
±10 µA
1.5 2.0 2.5 V
13 27
S
12 15 mΩ
15 22 mΩ
3200
pF
520
pF
270
pF
36
ns
310
ns
170
ns
180
ns
61
nC
8.2
nC
17
nC
1.0
V
48
ns
89
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14473EJ3V1DS
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