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2SK3402

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3402

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

★ ORDERING INFORMATION

The 2SK3402 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

2SK3402

PACKAGE

TO-251 (MP-3)

FEATURES

• Low On-State Resistance

RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A)

RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A)

• Low Ciss : Ciss = 3200 pF TYP.

• Built-in Gate Protection Diode

• TO-251/TO-252 package

2SK3402-Z

TO-252 (MP-3Z)

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) Note1

ID(DC)

ID(pulse)

±36

A

±144

A

Total Power Dissipation (TC = 25°C)

PT1

40

W

Total Power Dissipation (TA = 25°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Tstg

–55 to +150 °C

IAS

35

A

EAS

123

mJ

(TO-252)

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14473EJ3V1DS00 (3rd edition)

Date Published October 2004 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

1999, 2000

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