2SK3307 Просмотр технического описания (PDF) - NEC => Renesas Technology

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2SK3307

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

TO-3P (MP-88)

15.7 MAX. 3.2±0.2

4

4.7 MAX.

1.5

123

2.2±0.2

5.45

1.0±0.2 0.6±0.1 2.8±0.1

5.45

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2SK3307

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D14129EJ3V0DS

7

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