2SK3307 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3307 Datasheet PDF : 8 Pages
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2SK3307
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 35 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 35 A
RDS(on)2 VGS = 4.0 V, ID = 35 A
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 35 A, VGS(on) = 10 V, VDD = 30 V,
Rise Time
tr
RG = 10 Ω
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
ID = 70 A , VDD = 48 V, VGS = 10 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D) IF = 70 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 70 A, VGS = 0 V,
Qrr
di/dt = 100 A/µs
MIN.
1.5
30
TYP. MAX.
10
±10
2.0 2.5
47
7.5 9.5
10.5 14
4650
780
380
90
1260
270
370
90
14
24
1.0
60
110
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
10%
0
VGS(on) 90%
VDD
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14129EJ3V0DS
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