2SK3307 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3307 Datasheet PDF : 8 Pages
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2SK3307
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
VGS = 4.0 V
15
10
10 V
5
0
ID = 35 A
−50
0
50
100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
100
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0
0.4
0.8
1.2
1.6
2.0
VSD - Source to Drain Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
td(on)
td(off)
tf
10
0.1
1
10
ID - Drain Current - A
tr
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
80
8
VDD = 48 V
30 V
60
12 V
VGS
6
40
4
20
2
0
VDS
ID = 70 A 0
0 20 40 60 80 100 120 140 160
QG - Gate Charge - nC
Data Sheet D14129EJ3V0DS
5
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