2SB1001 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1001

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1001

10,000

DC Current Transfer Ratio vs.

Collector Current

3,000

VCE = –2 V

Pulse

1,000

25

Ta = 75°C

300

100

–25

30

10

–1

–3 –10 –30 –100 –300 –1,000

Collector Current IC (mA)

Saturation Voltage vs. Collector Current

–3.0

–1.0

VBE (sat)

–0.3

–0.1

–0.03

–0.01

VCE (sat)

IC = 10 IB

Pulse

–0.003

–3

–10 –30 –100 –300 –1,000–3,000

Collector Current IC (mA)

1,000

300

Collector Output Capacitance vs.

Collector to Base Voltage

f = 1 MHz

IE = 0

100

30

10

–0.1 –0.3

–1.0

–3

–10

Collector to Base Voltage VCB (V)

4

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