2SB1001 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1001

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1001

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

–20

–16

–6

–2

–3

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max

Collector to base breakdown

V(BR)CBO

–20

—

—

voltage

Collector to emitter breakdown V(BR)CEO –16

—

—

voltage

Emitter to base breakdown

V(BR)EBO

–6

—

—

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

I CBO

I EBO

hFE*1

—

—

—

—

100 —

–0.1

–0.1

320

Collector to emitter saturation VCE(sat) —

voltage

Base to emitter saturation

voltage

VBE(sat)

—

Gain bandwidth product

fT

—

–0.15 –0.3

–1.0 –1.2

150 —

Collector output capacitance Cob

—

50

—

Note: 1. The 2SB1001 is grouped by hFE as follows.

Mark

BH

BJ

hFE

100 to 200 160 to 320

Unit

V

V

V

µA

µA

V

V

MHz

pF

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –16 V, IE = 0

VEB = –5 V, IC = 0

VCE = –2 V,

IC = –0.1 A (Pulse test)

IC = –1 A,

IB = –0.1 A (Pulse test)

IC = –1 A,

IB = –0.1 A (Pulse test)

VCE = –2 V,

IC = –10 mA

VCB = –10 V, IE = 0,

f = 1 MHz

2

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