2SB1001 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
Список матч
2SB1001 Datasheet PDF : 6 Pages
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Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
–2.0
–25
–20
–15
–1.6
–10
–1.2
–5 mA
–0.8
–0.4
IB = 0
0
–0.4 –0.8 –1.2 –1.6 –2.0
Collector to Emitter Voltage VCE (V)
2SB1001
–100
–80
Typical Output Characteristics (1)
–0.35 –0.3–0.25
–0.2
–60
–0.15
–40
–0.1
–20
–0.05 mA
IB = 0
0
–2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
–1,000
–300
Typical Transfer Characteristics
VCE = –2 V
Pulse
–100
–30
–10
Ta = 75°C
25 –25
–3
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
3
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