2SK2959 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2959 Datasheet PDF : 9 Pages
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2SK2959
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I D = 20 A
0.1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
500
100
50
20
VGS = 4 V
10
10 V
5
1 2 5 10 20 50 100 200
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
I D = 5, 10, 20 A
16
VGS = 4 V
12
8
10 V
4
5 ,10, 20 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
0.1 0.2
0.5 1 2
Drain Current
V DS = 10 V
Pulse Test
5 10 20 50
I D (A)
4
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