2SK2959 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2959

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2959

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Ratings

Unit

30

V

±20

V

50

A

200

A

50

A

75

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 30

Gate to source breakdown voltage V(BR)GSS ±20

Zero gate voltege drain current

I DSS

—

Gate to source leak current

I GSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

Static drain to source on state

resistance

RDS(on)

—

Forward transfer admittance

Input capacitance

|yfs|

25

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 3. Pulse test

Typ Max Unit Test Conditions

—

—

V

ID = 10mA, VGS = 0

—

—

V

IG = ±100µA, VDS = 0

—

10

µA

VDS = 30 V, VGS = 0

—

±10 µA

VGS = ±16V, VDS = 0

—

2.0 V

ID = 1mA, VDS = 10V

7.0 10

mΩ

ID = 25A, VGS = 10V Note3

12

18

mΩ

ID = 25A, VGS = 4V Note3

45

—

2000 —

1500 —

350 —

20

—

330 —

190 —

190 —

0.95 —

60

—

S

ID = 25A, VDS = 10V Note3

pF

VDS = 10V

pF

VGS = 0

pF

f = 1MHz

ns

VGS = 10V, ID = 25A

ns

RL = 0.4Ω

ns

ns

V

IF = 50A, VGS = 0

ns

IF = 50A, VGS = 0

diF/ dt =50A/µs

2

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