2SK2959 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2959

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2959

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 7mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

TO–220AB

D

G

S

ADE-208-569C (Z)

4th. Edition

Aug 1998

1

2

3

1. Gate

2. Drain(Flange

3. Source

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