K2800 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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K2800 Datasheet PDF : 10 Pages
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2SK2800
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
200
100
Crss
50
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
I D = 40 A
80
16
V DD = 10 V
25 V
60 VDS
50 V
VGS
12
40
8
20
V DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1000
300
100
30
10
Switching Characteristics
t d(off)
tf
tr
t d(on)
3
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I D (A)
6
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