K2800 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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K2800 Datasheet PDF : 10 Pages
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2SK2800
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I D = 50 A
0.4
20 A
10 A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
0.01
0.005
1
VGS = 4 V
10 V
2
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.04
I D = 20 A
0.03 V GS = 4 V
10 A
0.02
0.01
10 V
50 A
10, 20 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25 °C
20
25 °C
10
75 °C
5
2
V DS = 10 V
1
Pulse Test
12
5 10 20 50 100
Drain Current I D (A)
5
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