K2800 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

K2800

Silicon N Channel MOS FET / High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2800

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note 3

AP

E Note 3

AR

Pch Note 2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

Ratings

Unit

60

V

±20

V

40

A

160

A

40

A

40

A

137

mJ

50

W

150

°C

–55 to +150

°C

2

Share Link: