SI4900DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4900DY Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Si4900DY
Vishay Siliconix
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating
100
10
1
0.000001
0.00001
0.0001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
0.001
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
www.vishay.com
5
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