SI4900DY Просмотр технического описания (PDF) - Vishay Semiconductors

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SI4900DY

Dual N-Channel 60-V (D-S) MOSFET

Vishay Semiconductors 

Si4900DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

0.12

TJ = 150 °C

0.11

10

0.10

0.09

TJ = 25 °C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.08

0.07

ID = 4.3 A

0.06

0.05

0.04

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

- 50 - 25

ID = 250 µA

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

Limited by RDS(on)*

10

25

20

15

10

5

0

0.01

0.1

1

10

100

1000

Time (s)

Single Pulse Power, Junction-to-Ambient

100 µs

1

0.1

TA = 25 °C

0.01

Single Pulse

1 ms

10 ms

100 ms

1s

10 s

DC

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4

0.001

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

Document Number: 73272

S09-0540-Rev. E, 06-Apr-09

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