SI4900DY Просмотр технического описания (PDF) - Vishay Semiconductors

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SI4900DY

Dual N-Channel 60-V (D-S) MOSFET

Vishay Semiconductors 

Dual N-Channel 60-V (D-S) MOSFET

Si4900DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

60

0.058 at VGS = 10 V

0.072 at VGS = 4.5 V

ID (A)a

5.3

4.7

Qg (Typ.)

13 nC

S1 1

G1 2

S2 3

G2 4

SO-8

Top View

8 D1

7 D1

6 D2

5 D2

Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free)

Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

APPLICATIONS

• LCD TV CCFL Inverter

D1

D2

G1

G2

S1

N-Channel MOSFET

S2

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

TC = 25 °C

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C

TA = 25 °C

ID

TA = 70 °C

Pulsed Drain Current (10 µs Width)

IDM

Continuous Source-Drain Diode Current

TC = 25 °C

TA = 25 °C

IS

Avalanche Current

Single-Pulse Avalanche Energy

L = 0 1 mH

IAS

EAS

TC = 25 °C

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

TA = 70 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

Limit

60

± 20

5.3

4.3

4.3b, c

3.4b, c

20

2.6

1.7b, c

11

6.1

3.1

2

2b, c

1.3b, c

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta, d

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

Symbol

RthJA

RthJF

Typical

55

33

Maximum

62.5

40

Unit

V

A

mJ

W

°C

Unit

°C/W

Document Number: 73272

S09-0540-Rev. E, 06-Apr-09

www.vishay.com

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