2SH11 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SH11 Datasheet PDF : 8 Pages
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2SH11
Typical Transfer Characteristics
20
Tc = –25 °C
16
25 °C
75 °C
12
8
4
Pulse Test
VCE = 10 V
0
4
8
12 16 20
Gate to Emitter Voltage V GE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
10
8
5A
3A
6
IC = 10 A
4
2
Pulse Test
0
4
8
12 16 20
Gate to Emitter Voltage V GE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
50
Pulse Test
VGE = 15 V
20
10
Tc =75 °C
5
25 °C
2
–25 °C
1
0.5
1
2
5 10 20
Collector Current IC (A)
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0
f = 1 MHz
Cies
100
Coes
Cres
10
0
10 20 30
40 50
Collector to Emitter Voltage VCE (V)
4
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