STPS1H100MF Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
Список матч
STPS1H100MF Datasheet PDF : 7 Pages
| |||
STPS1H100MF
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
0.9 PF(AV)(W)
0.8
δ=0.2
δ=0.5
δ=1
0.7
δ=0.1
0.6
δ=0.05
0.5
0.4
0.3
0.2
T
0.1
IF(AV)(A)
δ=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1.2 IF(AV)(A)
1.0
Rth(j-a)=Rth(j-c)
0.8
0.6
0.4
Rth(j-a)=250°C/W
T
0.2
0.0
0
δ=tp/T
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Forward voltage drop versus
forward current
IM(A)
22
20
18
16
14
12
10
8
6
4
IM
2
0
1.E-04
t
δ =0.5
1.E-03
t(s)
1.E-02
Tc=25 °C
Tc=75 °C
Tc=125 °C
1.E-01
1.E+00
20.0 IFM(A)
18.0
16.0
14.0
Tj=125 °C
(Maximum values)
12.0
10.0
8.0
Tj=125 °C
(Typical values)
6.0
Tj=25 °C
4.0
(Maximum values)
2.0
VFM(V)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
3/7
Share Link: 