STPS1H100MF Просмотр технического описания (PDF) - STMicroelectronics
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STPS1H100MF Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS1H100MF
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
IF(RMS)
IF(AV)
Forward current rms
Average forward current
2
Tc = 160 °C δ = 0.5
1
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
50
IRRM Repetitive peak reverse current
tp = 2 µs, F = I kHz square
1
IRSM Non-repetitive peak reverse current tp = 100 µs square
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
1500
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
-65 to + 175
175
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
10000
Table 3. Thermal resistance
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
20
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ Max. Unit
IR (1)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
4
µA
0.2 0.5 mA
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 1 A
IF = 2 A
0.77
0.58 0.62
V
0.86
0.65 0.7
1. Pulse test: = 5 ms, δ < 2%
2. Pulse test: = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF2(RMS)
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