STPS1H100 Просмотр технического описания (PDF) - STMicroelectronics
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STPS1H100 Datasheet PDF : 10 Pages
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STPS1H100
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
PF(AV)(W)
0.8
0.7
0.6
0.5
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
0.4
0.3
0.2
T
0.1
IF(AV)(A)
δ=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
IF(AV)(A)
1.2
1.0
0.8
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
0.6
Rth(j-a)=200°C/W
0.4
0.2
0.0
0
T
δ=tp/T
25
tp
50
Tamb(°C)
75
100
Rth(j-a)=Rth(j-l)
SMB / SMAflat
SMA
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values) (SMB)
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
IM(A)
10
SMB
9
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ =0.5
1.E-02
t(s)
1.E-01
Ta=25 °C
Ta=75 °C
Ta=110 °C
1.E+00
IM(A)
8
SMA
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ =0.5
1.E-02
t(s)
1.E-01
Ta=25 °C
Ta=75 °C
Ta=110 °C
1.E+00
3/10
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