STPS1H100 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
Список матч
STPS1H100 Datasheet PDF : 10 Pages
| |||
Characteristics
1
Characteristics
STPS1H100
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
IF(RMS) RMS forward voltage
10
IF(AV) Average forward current
TL = 160 °C δ = 0.5
1
IFSM Surge non repetitive forward current tp =10 ms sinusoidal
50
IRRM Repetitive peak reverse current
tp = 2 µs F = 1 kHz square
1
IRSM Non repetitive peak reverse current tp = 100 µs square
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
1500
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
-65 to + 175
175
dV/dt Critical rate of rise of reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
V
A
A
A
A
A
W
°C
°C
V/µs
Unit
Rth(j-l) Junction to lead
SMA
SMB
SMAflat
30
25
°C/W
25
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 1 A
IF = 2 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.08 IF2(RMS)
Min. Typ. Max. Unit
4 µA
0.2 0.5 mA
0.77
0.58 0.62
V
0.86
0.65 0.7
2/10
Share Link: 