HN29W12811 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W12811

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Hitachi -> Renesas Electronics 

HN29W12811 Series

Program (1) and Status Data Polling Timing Waveform

CE

OE

WE

CDE

SC

I/O0 to I/O7

RES

RDY

/Busy

tCES

tOEWS tCWC tCWC

tWPH tWPH

tCEH

tCE

tOEPS

tOE

tCDS tWPtCDS tWP

tWP

tCDSS

tSW tWP

tASP

tCDH

tCDH

tSCC

tSPL

*1

tCDH

tSCHW

tSCS

tDS

tDH

tAS

tAH

tAS

tAH

tSDH

tSDS

tSP

tSP tDS

tDH

tDF

10H SA (1) SA (2) PD0 PD1 PD2111 40H

tDB

tRP

High-Z

I/O7 = VOL

*2

Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 2112.

2. Any commands, including reset command FFH, cannot be input while RDY/Busy is VOL.

3. The status returns to the standby status after RDY/Busy returns to High-Z.

4. By using program (1), data can be programmed additionally for each sector before erase.

tRDY

tCDS

tDF

I/O7 = VOH

*3

High-Z

26

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