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HN29W12811 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
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HN29W12811
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
Hitachi -> Renesas Electronics
HN29W12811 Datasheet PDF : 42 Pages
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HN29W12811 Series
HN29W12811
-60
Parameter
Symbol Min Typ Max
SC setup for
CE
SC hold time for
WE
CE
to output delay
OE
to output delay
OE
high to output float
RES
to
CE
setup time
CDE
setup time for
WE
CDE
hold time for
WE
CDE
setup time for SC
CDE
hold time for SC
Next cycle ready time
CDE
to
OE
hold time
CDE
to output delay
CDE
to output invalid
CE
setup time for
OE
CE
hold time for
OE
CDE
to
OE
setup time
OE
setup time for SC
OE
low to output low-Z
SC to output delay
SC to output hold
RDY/
Busy
setup for SC
CE
hold time for
WE
CE
hold time for
WE
on recovery
read mode
t
SCS
t
SCHW
t
CE
t
OE
t
DF
t
RP
t
CDS
t
CDH
t
CDSS
t
CDSH
t
RDY
t
CDOH
t
CDAC
t
CDF
t
COS
t
COH
t
CDOS
t
OES
t
OEL
t
SAC
t
SH
t
RS
t
CWH
t
CWHR
0
——
20 — —
— — 120
— — 60
— — 40
1
——
0
——
20 — —
1.5 — —
30 — —
0
——
50 — —
— — 50
— — 100
0
——
0
——
20 — —
0
——
0
— 40
— — 60
15 — —
200 — —
1.0 — —
2
——
WE
hold time for
WE
t
WWH
1
——
Busy time on read mode
t
RBSY
— 45 —
Note: 1. t
DF
is a time after which the I/O pins become open.
Unit
ns
ns
ns
ns
ns
ms
ns
ns
µ
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ
s
µ
s
µ
s
µ
s
Test conditions
Note
1
22
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