HN29W12811 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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HN29W12811
Hitachi -> Renesas Electronics
HN29W12811 Datasheet PDF : 42 Pages
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HN29W12811 Series
Program, Erase and Erase Verify
Parameter
Symbol
Write cycle time
Serial clock cycle time
CE setup time
CE hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
OE setup time before command
write
t CWC
t SCC
t CES
t CEH
t WP
t WPH
t AS
t AH
t DS
t DH
t OEWS
OE setup time before status polling tOEPS
OE setup time before read
t OER
Time to device busy
t DB
Time to device busy on read mode tDBR
Auto erase time
t ASE
Auto program time
t ASP
Program(1), (3)
Program(2)
t ASP
Program(4),
t ASP
Data recovery write
WE to SC delay time
WE to SC delay time on recovery
read mode
t WSD
t WSDR
CE pulse high time
t CPH
SC pulse width
t SP
SC pulse low time
t SPL
Data setup time for SC
t SDS
Data hold time for SC
t SDH
SC setup for WE
t SW
HN29W12811
-60
Min Typ Max Unit Test conditions
120 — — ns
60 — — ns
0
— — ns
0
— — ns
60 — — ns
40 — — ns
50 — — ns
10 — — ns
50 — — ns
10 — — ns
0
— — ns
40 —
250 —
——
——
— 1.0
— 2.5
— ns
— ns
150 ns
1
µs
14.0 ms
22.0 ms
— 2.0 22.0 ms
— 2.5 30.0 ms
50 — — µs
2
— — µs
200 — — ns
25 — — ns
25 — — ns
0
— — ns
35
—
—
ns
CDE = VIL
50 — — ns
Note
21
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