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IRG4BC30WS   Даташит

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IR
International Rectifier
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
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IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
IR
International Rectifier
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
IR
International Rectifier
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
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