2N3807   Даташит

Central Semiconductor Corp

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

New Jersey Semiconductor

DUAL PNP SILICON ANNULAR TRANSISTORS

Semelab - > TT Electronics plc

Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications

Central Semiconductor Corp

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

New Jersey Semiconductor

DUAL PNP SILICON ANNULAR TRANSISTORS

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor Corp

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor Corp

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor Corp

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Unspecified

SILICON DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS

Central Semiconductor

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)