datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Yangzhou yangjie electronic co., Ltd  >>> YJS10N02A PDF

YJS10N02A Даташит - Yangzhou yangjie electronic co., Ltd

YJS10N02A image

Номер в каталоге
YJS10N02A

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
644.3 kB

производитель
YANGJIE
Yangzhou yangjie electronic co., Ltd YANGJIE

Product Summary
● VDS 20 V
● ID 10 A
● RDS(ON)( at VGS=4.5V) <13.5 mohm
● RDS(ON)( at VGS=2.5V) <17 mohm
● RDS(ON)( at VGS=1.8V) <28 mohm

General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching


APPLICATIONs
● Battery protection
● Load switch
● Power management


Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]