Description
M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

FEATUREs
• Integrated Doubler and Power Amplifier
• Excellent Saturated Output Stage
• +26.0 dBm Output Power
• 50.0 dBc Fundamental Suppression
• 100% On-Wafer RF, DC & Output Power Testing
• 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
• RoHS* Compliant and 260°C Reflow Compatible