■General Description
The XP133A0245SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

◆ N-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.045Ω (max)
◆ Ultra High-Speed Switching
◆ SOP-8 Package
◆ Two FET Devices Built-in

■ Features
    Low on-state resistance : Rds(on)=0.045Ω (Vgs=4.5V) : Rds(on)=0.060Ω (Vgs=2.5V) : Rds(on)=0.1Ω (Vgs=1.5V)
    Ultra high-speed switching
    Operational Voltage : 1.5V
    High density mounting : SOP-8

■ Applications
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems