Descriptions
The WNM2310 is N-Channel enhancement MOS Field Effect Transistor and Schottky Diode as a single package for switching. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. Standard Product WNM2310 is Pb-free and Halogen-free.

FEATUREs
● Small package SOT-563B
● Featuring a MOSFET and Schottky Barrier
   Diode
● Excellent ON resistance for higher DC current
● Low leakage current Schottky Barrier Diode

APPLICATIONs
● Driver: Relay, Solenoid, Lamps,Hammers etc.
● Power supply converters circuit
● Load/Power Switching for potable device