Description
The WNM2096 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2096 is Pb-free.

FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● Small package DFN1006-3L

APPLICATIONs
● DC/DC converters
● Power supply converters circuit
● Load/Power Switching for portable device