WFP70N06T Даташит - Shenzhen Winsemi Microelectronics Co., Ltd
Номер в каталоге
WFP70N06T
Компоненты Описание
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454.6 kB
производитель
Shenzhen Winsemi Microelectronics Co., Ltd
General Description
This Power MOSFET is produced using Winsemis advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.
Features
◾ 68A,60V, RDS(on)(Max18mΩ)@VGS=10V
◾ Ultra-low Gate charge(Typical 20nC)
◾ Improved dv/dt capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(175℃ )
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