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VSMY3850-GS08(2011) Даташит - Vishay Semiconductors

VSMY3850 image

Номер в каталоге
VSMY3850-GS08

Other PDF
  2010   2011_09   lastest PDF  

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page
6 Pages

File Size
128.1 kB

производитель
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC

RELEASED FOR APPLICATIONS
• IR remote control
• 3D TV


Номер в каталоге
Компоненты Описание
PDF
производитель
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2013 )
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011_03 )
Vishay Semiconductors

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