Номер в каталоге
VSMY3850-GS08
производитель
Vishay Semiconductors
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
RELEASED FOR APPLICATIONS
Infrared radiation source for operation with CMOS cameras
(illumination)
• High speed IR data transmission
• IR touch panels
• 3D TV
• Light curtain
Номер в каталоге
Компоненты Описание
PDF
производитель
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2013 )
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High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
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High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011_03 )
Vishay Semiconductors