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VSMB3940X01 Даташит - Vishay Semiconductors

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Номер в каталоге
VSMB3940X01

Other PDF
  2009   2010  

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6 Pages

File Size
870.2 kB

производитель
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMB3940X01 is an infrared, 940 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering acc. J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders


Номер в каталоге
Компоненты Описание
PDF
производитель
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2014 )
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors

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