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VSMB10940X01 Даташит - Vishay Semiconductors

VSMB10940X01 image

Номер в каталоге
VSMB10940X01

Компоненты Описание

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6 Pages

File Size
288.7 kB

производитель
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMB10940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half intensity: ϕ = ± 75°
• Low forward voltage
• Package matches with detector VEMD10940FX01
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• IR touch panel
• High power emitter for low space applications
• High performance transmissive or reflective sensors
• Automotive applications


Номер в каталоге
Компоненты Описание
PDF
производитель
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors

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