General-Purpose Switching Device Applications

FEATUREs
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one
package facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.