Description
The V58C365164S is a four bank DDR DRAM organized as 4 banks x 1Mbit x 16. The V58C365164S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock
All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions are possible on both edges of DQS.

FEATUREs
■ 4 banks x 1Mbit x 16 organization
■ High speed data transfer rates with system frequency up to 275 MHz
■ Data Mask for Write Control (DM)
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 2.5, 3
■ Programmable Wrap Sequence: Sequential or Interleave
■ Programmable Burst Length:
   2, 4, 8 for Sequential Type
   2, 4, 8 for Interleave Type
■ Automatic and Controlled Precharge Command
■ Suspend Mode and Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 66-pin 400 mil TSOP-II
■ SSTL-2 Compatible I/Os
■ Double Data Rate (DDR)
■ Bidirectional Data Strobe (DQs) for input and output data, active on both edges
■ On-Chip DLL aligns DQ and DQs transitions with CLK transitions
■ Differential clock inputs CLK and CLK
■ Power supply 3.3V ± 0.3V
■ VDDQ (I/O) power supply 2.5 + 0.2V