DESCR IPTI ON 
   The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent.
   The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high performance and high reliability.

FEATURES 
• High Memory Density
• MUltiplexed Address Inputs
• Single +5V Supply
• On Chip Substrate Bias Generator
• Access Time: μPD4164-1 - 250 ns
                         μPD4164-2 - 200 ns
                         μPD4164-3 - 150 ns
• Read, Write Cycle Time: μPD4164-1 - 410 ns
                                          μPD4164-2 - 335 ns
                                          μPD4164-3 - 270 ns
• Low Power Dissipation: 250 mW (Active); 28 mW (Standby)
• Non-Latched Output is Three-State, TTL Compatible
• Read, Write, Read-Write; Read-Modify-Write, RAS Only Refresh, and Page Mode
   Capability
• All Inputs TTL Compatible, and Low Input Capacitance
• 128 Refresh Cycles (AO-A6 Pins for Refresh Address)
• CAS Controlled Output Allows Hidden Refresh
• Available in Both Ceramic and Plastic 16 Pin Packages