DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter application.

FEATURES
• Built a Schottky Barrier Diode
• Low on-state resistance
   RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A)
   RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A)
   RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP.
• Small and surface mount package (Power SOP8)