производитель
NEC => Renesas Technology
DESCRIPTION
The µ PA2510, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers.
FEATURES
• µ PA2510 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance
RDS(on)1 = 10.1 mΩ MAX. (VGS = −10.0 V, ID = −9.0 A)
RDS(on)2 = 14.0 mΩ MAX. (VGS = −4.5 V, ID = −9.0 A)
• Low Ciss: 3000 pF TYP. (VDS = −10.0 V, VGS = 0 V)
Номер в каталоге
Компоненты Описание
PDF
производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology