производитель
NEC => Renesas Technology
DESCRIPTION
The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 15.2 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −5.0 A)
RDS(on)3 = 25 mΩ MAX. (VGS = −2.5 V, ID = −5.0 A)
• Built-in G-S protection diode against ESD
Номер в каталоге
Компоненты Описание
PDF
производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology